Home
Tel: 86-755-83295289 Email:
Product Detail
 All Product > Discrete Semiconductors > Diodes > Infineon Technologies  (BSD314SPE L6327)
Infineon Technologies BSD314SPE L6327
PartNo:

BSD314SPE L6327
Manufacturers: Infineon Technologies
Qty: 2472
Request Qty:   
Description: MOSFET P-Channel -30V MOSFET
PDF:
Quick Quotation
Company Name:* Contact Name:*  
Email:* Tel:*
Request Qty:* Verification Code:*

Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:- 1.5 A
Rds On - Drain-Source Resistance:140 mOhms
Configuration:Single Quad Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:- 2.9 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:500 mW
Mounting Style:SMD/SMT
Package / Case:SOT-363-6
Packaging:Reel
AUIRF7342QTR
AUIRF7342QTR
MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
STP15N65M5
STP15N65M5
MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS
SI1913DH-T1-E3
SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
BSD314SPE L6327 Related Product
  • Electronic Components Distributor
    Since 2000
  • ©2001 - 2015  www.cxda.com all rights reservied.
  • Electronic Components Supplier  | 
  • China Electronic Components Manufacturer  | 
  • Electronic Components Distributor